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    Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3

    RS Stock No.:
    178-3691
    Mfr. Part No.:
    SIRC06DP-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Vishay Siliconix
    View all MOSFETs
    Available for back order.
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    Added

    Price Each (On a Reel of 3000)

    HK$4.177

    unitsPer unitPer Reel*
    3000 - 12000HK$4.177HK$12,531.00
    15000 +HK$3.759HK$11,277.00
    *price indicative
    RS Stock No.:
    178-3691
    Mfr. Part No.:
    SIRC06DP-T1-GE3
    Manufacturer:
    Vishay Siliconix

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product overview and Technical data sheets


    Legislation and Compliance

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product Details

    TrenchFET® Gen IV power MOSFET
    SkyFET® with monolithic Schottky diode


    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current60 A
    Maximum Drain Source Voltage30 V
    Package TypePowerPAK SO-8
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance4 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1V
    Minimum Gate Threshold Voltage2.1V
    Maximum Power Dissipation50 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-16 V, +20 V
    Number of Elements per Chip2
    Maximum Operating Temperature+150 °C
    Typical Gate Charge @ Vgs38.5 nC @ 10 V
    Length5.99mm
    Transistor MaterialSi
    Width5mm
    Height1.07mm
    Minimum Operating Temperature-55 °C
    Forward Diode Voltage0.7V
    SeriesTrenchFET
    Available for back order.
    Add to Basket
    units

    Added

    Price Each (On a Reel of 3000)

    HK$4.177

    unitsPer unitPer Reel*
    3000 - 12000HK$4.177HK$12,531.00
    15000 +HK$3.759HK$11,277.00
    *price indicative