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    Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 Vishay Siliconix SIRC06DP-T1-GE3

    RS Stock No.:
    178-3691
    Mfr. Part No.:
    SIRC06DP-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Vishay Siliconix
    View all MOSFETs
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    Price Each (On a Reel of 3000)

    HK$4.177

    unitsPer unitPer Reel*
    3000 - 12000HK$4.177HK$12,531.00
    15000 +HK$3.759HK$11,277.00
    *price indicative
    RS Stock No.:
    178-3691
    Mfr. Part No.:
    SIRC06DP-T1-GE3
    Manufacturer:
    Vishay Siliconix

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product overview and Technical data sheets


    Legislation and Compliance

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product Details

    TrenchFET® Gen IV power MOSFET
    SkyFET® with monolithic Schottky diode



    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current60 A
    Maximum Drain Source Voltage30 V
    Package TypeSO-8
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance4 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1V
    Minimum Gate Threshold Voltage2.1V
    Maximum Power Dissipation50 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-16 V, +20 V
    Typical Gate Charge @ Vgs38.5 nC @ 10 V
    Length5.99mm
    Maximum Operating Temperature+150 °C
    Transistor MaterialSi
    Number of Elements per Chip2
    Width5mm
    SeriesTrenchFET
    Forward Diode Voltage0.7V
    Minimum Operating Temperature-55 °C
    Height1.07mm
    Available for back order.
    Add to Basket
    units

    This product is currently unavailable to backorder.

    Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

    Added

    Price Each (On a Reel of 3000)

    HK$4.177

    unitsPer unitPer Reel*
    3000 - 12000HK$4.177HK$12,531.00
    15000 +HK$3.759HK$11,277.00
    *price indicative