Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF
- RS Stock No.:
- 171-1991P
- Mfr. Part No.:
- IPT015N10N5ATMA1
- Manufacturer:
- Infineon
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- 155 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 500 - 995 | HK$52.16 |
| 1000 + | HK$51.36 |
*price indicative
- RS Stock No.:
- 171-1991P
- Mfr. Part No.:
- IPT015N10N5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOF | |
| Series | IPT015N10N5 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 169nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOF | ||
Series IPT015N10N5 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 169nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon MOSFET
The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.5mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• 100% avalanche tested
• Excellent gate charge x RDS (on) product (FOM)
• Halogen free
• Highest system efficiency
• Ideal for high switching frequency
• Increased power density
• Lead (Pb) free plating
• Low voltage overshoot
• Operating temperature ranges between -55°C and 175°C
• Optimized for synchronous rectification
• Output capacitance reduction of up to 44%
• RDS (on) reduction of up to 44%
• Very low on resistance RDS (on)
Applications
• Adapter
• Light electric vehicles
• Low voltage drives
• Server power supplies
• Solar
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
Related links
- Infineon IPT015N10N5 Type N-Channel MOSFET 100 V Enhancement, 9-Pin HSOF
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