Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3

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Subtotal (1 pack of 20 units)*

HK$88.20

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Units
Per unit
Per Pack*
20 - 740HK$4.41HK$88.20
760 +HK$4.30HK$86.00

*price indicative

Packaging Options:
RS Stock No.:
814-1225
Mfr. Part No.:
SIA517DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

12V

Series

TrenchFET

Package Type

SC-70

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.7nC

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

6.5W

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

2.15mm

Height

0.8mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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