Vishay Isolated TrenchFET 2 N-Channel Power MOSFET, 1.3 A, 20 V Enhancement, 6-Pin SC-88 SI1922EDH-T1-GE3

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RS Stock No.:
165-6930
Mfr. Part No.:
SI1922EDH-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

1.3A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-88

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

263mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.6nC

Maximum Gate Source Voltage Vgs

-8V, +8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.25W

Maximum Operating Temperature

+150°C

Transistor Configuration

Isolated

Height

1mm

Length

2.2mm

Width

1.35mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
PH

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