Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70

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Subtotal (1 reel of 3000 units)*

HK$9,306.00

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Units
Per unit
Per Reel*
3000 - 3000HK$3.102HK$9,306.00
6000 - 27000HK$3.04HK$9,120.00
30000 +HK$2.949HK$8,847.00

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RS Stock No.:
165-7183
Mfr. Part No.:
SIA517DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

12V

Series

TrenchFET

Package Type

SC-70

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6.5W

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

9.7nC

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Height

0.8mm

Width

2.15 mm

Standards/Approvals

No

Length

2.15mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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