Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3

The image is for reference only, please refer to product details and specifications

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
165-7183
Mfr. Part No.:
SIA517DJ-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P, Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

12V

Series

TrenchFET

Package Type

SC-70

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-8V, +8V

Maximum Power Dissipation Pd

6.5W

Typical Gate Charge Qg @ Vgs

9.7nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Isolated

Maximum Operating Temperature

+150°C

Height

800μm

Length

2.15mm

Width

2.15mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy