Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SI7288DP-T1-GE3

RS Stock No.:: 919-4334
Mfr. Part No.:: SI7288DP-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SI7288DP-T1-GE3

Price Each (On a Reel of 3000)**

HK$5.655

11180 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Reel**
3000 - 12000	HK$5.655	HK$16,965.00
15000 +	HK$5.542	HK$16,626.00

**price indicative

RS Stock No.:: 919-4334
Mfr. Part No.:: SI7288DP-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	40 V
Package Type	PowerPAK SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	22 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	15.6 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	10 nC @ 10 V
Transistor Material	Si
Width	5mm
Length	5.99mm
Maximum Operating Temperature	+150 °C
Height	1.07mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SI7288DP-T1-GE3

FREE delivery for orders over HK$850.00

Dual N-Channel MOSFET, Vishay Semiconductor