Vishay Isolated TrenchFET 2 N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
818-1390
Mfr. Part No.:
SI7288DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

15.6W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20, +20V

Maximum Operating Temperature

+150°C

Transistor Configuration

Isolated

Height

1.07mm

Length

5.99mm

Standards/Approvals

No

Width

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N-Channel MOSFET, Vishay Semiconductor


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