IXYS HiperFET, Polar Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

HK$4,014.20

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  • 370 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
10 - 40HK$401.42HK$4,014.20
50 +HK$393.39HK$3,933.90

*price indicative

RS Stock No.:
168-4494
Mfr. Part No.:
IXFN60N80P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.04kW

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

250nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.6mm

Length

38.23mm

Width

25.42 mm

Automotive Standard

No

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