IXYS HiperFET, Polar Type N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

HK$2,883.50

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Units
Per unit
Per Tube*
10 - 40HK$288.35HK$2,883.50
50 +HK$276.82HK$2,768.20

*price indicative

RS Stock No.:
920-0745
Mfr. Part No.:
IXFN80N50P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

195nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

700W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

38.2mm

Height

9.6mm

Width

25.07 mm

Automotive Standard

No

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