N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

RS Stock No.:: 165-6980
Mfr. Part No.:: SIRA14DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

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Price Each (On a Reel of 3000)**

HK$1.985

3000 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Reel**
3000 - 12000	HK$1.985	HK$5,955.00
15000 +	HK$1.945	HK$5,835.00

**price indicative

RS Stock No.:: 165-6980
Mfr. Part No.:: SIRA14DP-T1-GE3
Manufacturer:: Vishay

SiRA14DP, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	58 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	8.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	31.2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Width	5.26mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	6.25mm
Typical Gate Charge @ Vgs	19.4 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor