Vishay TrenchFET Type N-Channel MOSFET, 45.5 A, 30 V Enhancement, 8-Pin SO-8 SIRA88DP-T1-GE3

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Subtotal (1 pack of 25 units)*

HK$87.70

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  • Shipping from 05 July 2027
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Units
Per unit
Per Pack*
25 - 725HK$3.508HK$87.70
750 +HK$3.424HK$85.60

*price indicative

Packaging Options:
RS Stock No.:
134-9696
Mfr. Part No.:
SIRA88DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45.5A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

25W

Typical Gate Charge Qg @ Vgs

16.8nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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