N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

RS Stock No.:: 165-7074
Mfr. Part No.:: SIRA06DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Price Each (On a Reel of 3000)**

HK$3.591

On back order for despatch 19/05/2025, delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Reel**
3000 - 3000	HK$3.591	HK$10,773.00
6000 - 9000	HK$3.483	HK$10,449.00
12000 +	HK$3.379	HK$10,137.00

**price indicative

RS Stock No.:: 165-7074
Mfr. Part No.:: SIRA06DP-T1-GE3
Manufacturer:: Vishay

SiRA06DP, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Maximum Operating Temperature	+150 °C
Length	6.25mm
Typical Gate Charge @ Vgs	51 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Width	5.26mm
Height	1.12mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor