N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA00DP-T1-GE3

RS Stock No.:: 787-9367
Mfr. Part No.:: SIRA00DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA00DP-T1-GE3

Price Each (In a Pack of 5)**

HK$15.862

45 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
5 +	HK$15.862	HK$79.31

**price indicative

RS Stock No.:: 787-9367
Mfr. Part No.:: SIRA00DP-T1-GE3
Manufacturer:: Vishay

SiRA00DP, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	1.35 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	104 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Width	5.26mm
Typical Gate Charge @ Vgs	147 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	6.25mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA00DP-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor