Vishay TrenchFET Type N-Channel MOSFET, 8.3 A, 100 V Enhancement, 8-Pin SO-8 Si4056ADY-T1-GE3

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Subtotal (1 pack of 10 units)*

HK$61.20

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Per Pack*
10 - 40HK$6.12HK$61.20
50 - 90HK$6.01HK$60.10
100 - 240HK$5.90HK$59.00
250 - 990HK$5.80HK$58.00
1000 +HK$5.69HK$56.90

*price indicative

Packaging Options:
RS Stock No.:
228-2819
Mfr. Part No.:
Si4056ADY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.3A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

19.2nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.75mm

Automotive Standard

No

The Vishay TrenchFET Gen IV N-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

Logic level gate drive

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