Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

HK$24,138.00

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Units
Per unit
Per Reel*
3000 - 3000HK$8.046HK$24,138.00
6000 - 9000HK$7.805HK$23,415.00
12000 +HK$7.57HK$22,710.00

*price indicative

RS Stock No.:
919-4246
Mfr. Part No.:
SIRA00DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.35mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

147nC

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Automotive Standard

No

COO (Country of Origin):
CN

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