N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

RS Stock No.:: 787-9389
Mfr. Part No.:: SIRA14DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

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Price Each (On a Tape of 10)

HK$4.419

3000 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per unit	Per Tape**
10 - 740	HK$4.419	HK$44.19
750 - 1490	HK$4.31	HK$43.10
1500 +	HK$4.243	HK$42.43

**price indicative

RS Stock No.:: 787-9389
Mfr. Part No.:: SIRA14DP-T1-GE3
Manufacturer:: Vishay

SiRA14DP, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	58 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	PowerPAK SO
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	8.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	31.2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Width	5.26mm
Length	6.25mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	19.4 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor