Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

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10 - 740HK$4.76HK$47.60
750 - 1490HK$4.64HK$46.40
1500 +HK$4.57HK$45.70

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Packaging Options:
RS Stock No.:
787-9389
Mfr. Part No.:
SIRA14DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

31.2W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.76V

Maximum Operating Temperature

150°C

Height

1.12mm

Width

5.26 mm

Standards/Approvals

No

Length

6.25mm

Automotive Standard

No

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