N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISA04DN-T1-GE3

RS Stock No.:: 768-9307
Mfr. Part No.:: SISA04DN-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISA04DN-T1-GE3

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Price Each (In a Bag of 2)**

HK$9.065

On back order for despatch 27/03/2025, delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Bag**
2 +	HK$9.065	HK$18.13

**price indicative

RS Stock No.:: 768-9307
Mfr. Part No.:: SISA04DN-T1-GE3
Manufacturer:: Vishay

SiSA04DN, N-Channel 30 V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	PowerPAK 1212
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.1 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	52 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Number of Elements per Chip	1
Width	3.15mm
Typical Gate Charge @ Vgs	51 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	3.15mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISA04DN-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor