Infineon IPD N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD80R450P7ATMA1
- RS Stock No.:
- 244-8551
- Mfr. Part No.:
- IPD80R450P7ATMA1
- Manufacturer:
- Infineon
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HK$42.00
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$21.00 | HK$42.00 |
| 10 - 98 | HK$20.50 | HK$41.00 |
| 100 - 248 | HK$20.05 | HK$40.10 |
| 250 - 498 | HK$19.50 | HK$39.00 |
| 500 + | HK$19.05 | HK$38.10 |
*price indicative
- RS Stock No.:
- 244-8551
- Mfr. Part No.:
- IPD80R450P7ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 75V Drain Source Voltage, 180A Continuous Drain Current - IPD80R450P7ATMA1
This MOSFET is a three‑lead N‑channel power transistor designed for high‑current switching in surface‑mounted applications. It operates across a wide temperature range for demanding conditions and is suitable where low conduction losses and robust gate protection are required.
Features and Benefits:
• 75V drain rating enables use in medium‑voltage designs
• 180A continuous current supports heavy‑load switching
• 3mΩ low Rds(on) reduces conduction losses
• 81W power dissipation allows high‑power operation
• 80nC typical gate charge supports fast switching control
• 20V gate tolerance provides gate overvoltage protection
• 180A continuous current supports heavy‑load switching
• 3mΩ low Rds(on) reduces conduction losses
• 81W power dissipation allows high‑power operation
• 80nC typical gate charge supports fast switching control
• 20V gate tolerance provides gate overvoltage protection
Applications
• Suitable for automotive power‑management modules
• Ideal for synchronous buck converter designs
• Used for high‑current motor drive stages
• Can be used for telecoms power distribution units
• Used with battery management and energy‑storage systems
• Ideal for synchronous buck converter designs
• Used for high‑current motor drive stages
• Can be used for telecoms power distribution units
• Used with battery management and energy‑storage systems
What thermal extremes can it withstand?
It is rated to function from -55°C up to +150°C under specified conditions.
How is it packaged for PCB assembly?
It is supplied in a TO‑252 surface‑mount package for solder mounting.
What gate drive considerations apply?
The gate can tolerate up to 20V and exhibits a typical total gate charge of 80nC for drive sizing.
Does it comply with automotive reliability standards?
It meets AEC‑Q101 requirements for automotive component qualification.
Are there environmental compliance details?
The device is RoHS‑compliant, restricting hazardous substances.
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