Infineon IPD N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD95R750P7ATMA1
- RS Stock No.:
- 244-0883
- Mfr. Part No.:
- IPD95R750P7ATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$19.55 | HK$39.10 |
| 10 - 98 | HK$19.05 | HK$38.10 |
| 100 - 248 | HK$18.70 | HK$37.40 |
| 250 - 498 | HK$18.05 | HK$36.10 |
| 500 + | HK$17.70 | HK$35.40 |
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- RS Stock No.:
- 244-0883
- Mfr. Part No.:
- IPD95R750P7ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 100V Drain Source Voltage, 180A Continuous Drain Current - IPD95R750P7ATMA1
This MOSFET is a high-current switching transistor designed for surface-mounted power applications, operating across a wide temperature range suitable for demanding environments. It is an N-channel device packaged in a TO-252 format and intended for use where robust gate drive and significant continuous drain current are required.
Features and Benefits:
• 100V drain withstand supports high-voltage switching
• 180A continuous drain current enables heavy-load handling
• 0.7mΩ RDS(on) minimises conduction losses under load
• 81W power dissipation allows sustained power delivery
• 80nC gate charge balances switching speed and drive requirements
• 20V gate rating provides headroom for common gate drives
• 180A continuous drain current enables heavy-load handling
• 0.7mΩ RDS(on) minimises conduction losses under load
• 81W power dissipation allows sustained power delivery
• 80nC gate charge balances switching speed and drive requirements
• 20V gate rating provides headroom for common gate drives
Applications
• Suitable for automotive power distribution modules
• Ideal for motor drive stages in electrified systems
• Used with DC-DC converters in high-current supplies
• Can be used for battery protection and management
• Suitable for high-power switching in industrial inverters
• Ideal for motor drive stages in electrified systems
• Used with DC-DC converters in high-current supplies
• Can be used for battery protection and management
• Suitable for high-power switching in industrial inverters
What temperature range can it reliably operate within?
It is rated to function from -55°C up to +150°C for extended operating conditions.
How does the pin configuration affect mounting?
The three-pin arrangement in a TO-252 surface-mount package facilitates Compact PCB layouts and efficient thermal conduction to the board.
What material or approval indicates restricted-substance compliance?
It meets RoHS requirements for restricted substances in electronic assemblies.
Is the device suitable for automotive qualification criteria?
It conforms to AEC-Q101 standards applicable to discrete semiconductors for automotive use.
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