Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD50N10S3L16ATMA1

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Subtotal (1 pack of 2 units)*

HK$44.60

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Units
Per unit
Per Pack*
2 - 8HK$22.30HK$44.60
10 - 98HK$21.75HK$43.50
100 - 248HK$21.30HK$42.60
250 - 498HK$20.75HK$41.50
500 +HK$20.30HK$40.60

*price indicative

Packaging Options:
RS Stock No.:
244-0878
Mfr. Part No.:
IPD50N10S3L16ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor is a Green product RoHS compliant and is Automotive AEC Q101 qualified.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

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