Infineon IPD N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1
- RS Stock No.:
- 244-0945
- Mfr. Part No.:
- IPD80R280P7ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
HK$31,830.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 25 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | HK$12.732 | HK$31,830.00 |
| 5000 - 5000 | HK$12.477 | HK$31,192.50 |
| 7500 + | HK$12.228 | HK$30,570.00 |
*price indicative
- RS Stock No.:
- 244-0945
- Mfr. Part No.:
- IPD80R280P7ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD80R280P7ATMA1
This MOSFET is a power N-channel transistor designed for high-current switching in surface-mounted applications. It operates across a broad temperature range for demanding environments and includes an intrinsic diode with defined forward voltage, making it suitable for automotive and industrial power stages.
Features and Benefits:
• 40V maximum drain-source voltage enabling mid-voltage system use
• 180A continuous drain current supporting heavy current loads
• 1.2mΩ low Rds(on) reducing conduction losses
• 81W power dissipation allowing sustained high-power operation
• 80nC gate charge for Rapid switching performance
• Vgs 20V maximum gate rating protecting gate-drive design
• 180A continuous drain current supporting heavy current loads
• 1.2mΩ low Rds(on) reducing conduction losses
• 81W power dissipation allowing sustained high-power operation
• 80nC gate charge for Rapid switching performance
• Vgs 20V maximum gate rating protecting gate-drive design
Applications
• Suitable for automotive power distribution modules
• Ideal for DC-DC converters in vehicles
• Used for motor-drive stages in electric systems
• Can be used for load switching in power management
• Appropriate for high-current SMD assemblies on boards
• Ideal for DC-DC converters in vehicles
• Used for motor-drive stages in electric systems
• Can be used for load switching in power management
• Appropriate for high-current SMD assemblies on boards
What temperature extremes can it withstand in operation?
It is specified to operate from -55°C to +150°C, providing a wide thermal range for harsh environments.
How does the intrinsic diode behave electrically?
The body diode exhibits a forward voltage of 0.9V which affects recirculating current and conduction loss during reverse conduction.
What packaging and mounting considerations apply for PCB design?
It is supplied in a TO-252 package intended for surface mounting, requiring appropriate solder-pad design and thermal management on the PCB.
Is it suitable for automotive-grade projects regarding qualification?
It meets the automotive AEC‑Q101 standard for suitability in automotive electronic applications.
Related links
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD30N12S3L31ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD80R450P7ATMA1