Vishay TrenchFET N channel-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 SI2302HDS-T1-GE3

N
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HK$1.40

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Units
Per unit
1 - 24HK$1.40
25 - 99HK$1.30
100 - 499HK$1.10
500 +HK$0.90

*price indicative

RS Stock No.:
735-213
Mfr. Part No.:
SI2302HDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8V

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Power Dissipation Pd

0.71W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
US

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