Vishay TrenchFET N channel-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318HDS-T1-GE3

N
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HK$1.68

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Per unit
1 - 24HK$1.68
25 - 99HK$1.12
100 +HK$0.56

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RS Stock No.:
735-214
Mfr. Part No.:
SI2318HDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.6A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.051Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

5.8nC

Maximum Power Dissipation Pd

2.1W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
US

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