P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3

RS Stock No.:: 812-3123
Mfr. Part No.:: SI2337DS-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3

Bulk discount available

Price Each (In a Pack of 20)**

HK$5.17

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
20 - 740	HK$5.17	HK$103.40
760 - 1480	HK$5.04	HK$100.80
1500 +	HK$4.96	HK$99.20

**price indicative

RS Stock No.:: 812-3123
Mfr. Part No.:: SI2337DS-T1-GE3
Manufacturer:: Vishay

Si2337DS, P-Channel 80V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1.75 A
Maximum Drain Source Voltage	80 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	303 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	3.04mm
Typical Gate Charge @ Vgs	11 nC @ 10 V
Maximum Operating Temperature	+150 °C
Width	1.4mm
Transistor Material	Si
Number of Elements per Chip	1
Height	1.02mm
Minimum Operating Temperature	-50 °C

P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3

FREE delivery for orders over HK$850.00

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor