Vishay TrenchFET N channel-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin 1206-8 ChipFET SI5908BDC-T1-GE3

N
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HK$8.20

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Units
Per unit
1 - 24HK$8.20
25 - 99HK$5.40
100 +HK$5.10

*price indicative

RS Stock No.:
735-215
Mfr. Part No.:
SI5908BDC-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

20V

Package Type

1206-8 ChipFET

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.05Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

8V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Operating Temperature

150°C

Length

3.1mm

Height

1.1mm

Width

1.975mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
DE

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