Semikron Danfoss SKM100GB12T4, Type N-Channel IGBT Module, 160 A 1200 V, 7-Pin SEMITRANS, Panel

Bulk discount available

Subtotal (1 unit)*

HK$854.90

Add to Basket
Select or type quantity
Temporarily out of stock
  • 151 unit(s) shipping from 11 March 2026
  • Plus 76 unit(s) shipping from 11 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9HK$854.90
10 - 49HK$820.80
50 +HK$786.50

*price indicative

RS Stock No.:
687-4958
Distrelec Article No.:
171-01-152
Mfr. Part No.:
SKM100GB12T4
Manufacturer:
Semikron Danfoss
Find similar products by selecting one or more attributes.
Select all

Brand

Semikron Danfoss

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

160A

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

2

Package Type

SEMITRANS

Mount Type

Panel

Channel Type

Type N

Pin Count

7

Switching Speed

20kHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Minimum Operating Temperature

175°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

-40°C

Width

34 mm

Length

94mm

Series

SKM100GB12T4

Height

30.1mm

Standards/Approvals

No

Automotive Standard

No

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package

Suitable for switching frequencies up to 12kHz

Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links