Semikron Danfoss SKM200GB125D Dual Half Bridge IGBT Module, 200 A 1200 V, 3-Pin SEMITRANS3, Panel Mount
- RS Stock No.:
- 468-2454
- Mfr. Part No.:
- SKM200GB125D
- Manufacturer:
- Semikron Danfoss
Bulk discount available
Subtotal (1 unit)*
HK$3,058.60
FREE delivery for orders over HK$250.00
In Stock
- 6 unit(s) ready to ship from another location
- Plus 66 unit(s) shipping from 11 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | HK$3,058.60 |
| 2 + | HK$2,966.90 |
*price indicative
- RS Stock No.:
- 468-2454
- Mfr. Part No.:
- SKM200GB125D
- Manufacturer:
- Semikron Danfoss
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron Danfoss | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | SEMITRANS3 | |
| Configuration | Dual Half Bridge | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Series | |
| Dimensions | 106.4 x 61.4 x 30.5mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Semikron Danfoss | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type SEMITRANS3 | ||
Configuration Dual Half Bridge | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Series | ||
Dimensions 106.4 x 61.4 x 30.5mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||

Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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