onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ, Surface

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Subtotal (1 unit)*

HK$530.60

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Units
Per unit
1 - 1HK$530.60
2 - 3HK$520.00
4 - 7HK$509.60
8 - 11HK$499.40
12 +HK$489.40

*price indicative

Packaging Options:
RS Stock No.:
245-6991
Mfr. Part No.:
NXH80B120MNQ0SNG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Maximum Power Dissipation Pd

69W

Number of Transistors

2

Package Type

Q0BOOST - Case 180AJ

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Length

55.2mm

Height

13.9mm

Standards/Approvals

RoHS

Series

NXH80B120MNQ0SNG

Automotive Standard

No

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC


The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 80 m SiC MOSFETs

Low Reverse Recovery and Fast Switching SiC Diodes

1600 V Bypass and anti parallel Diodes

Low Inductive Layout Solderable Pins Thermistor

These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant

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