Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT Module
	Maximum Power Dissipation Pd	69W
	Number of Transistors	2
	Package Type	Q0BOOST - Case 180AJ
	Mount Type	Surface
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Width	32.8 mm
	Series	NXH80B120MNQ0SNG
	Standards/Approvals	RoHS
	Length	55.2mm
	Height	13.9mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT Module
	Maximum Power Dissipation Pd 69W
	Number of Transistors 2
	Package Type Q0BOOST - Case 180AJ
	Mount Type Surface
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Width 32.8 mm
	Series NXH80B120MNQ0SNG
	Standards/Approvals RoHS
	Length 55.2mm
	Height 13.9mm
	Automotive Standard No

Datasheet - NXH80B120MNQ0SNG

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 80 m SiC MOSFETs

Low Reverse Recovery and Fast Switching SiC Diodes

1600 V Bypass and anti parallel Diodes

Low Inductive Layout Solderable Pins Thermistor

These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant

onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ, Surface

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC

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