onsemi, Type N-Channel IGBT Module, 50 A 1200 V, 22-Pin Q0BOOST, Surface
- RS Stock No.:
- 195-8768
- Mfr. Part No.:
- NXH100B120H3Q0PTG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 195-8768
- Mfr. Part No.:
- NXH100B120H3Q0PTG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 186W | |
| Package Type | Q0BOOST | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 22 | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Operating Temperature | -40°C | |
| Height | 11.9mm | |
| Standards/Approvals | No | |
| Series | NXH100B120H3Q0 | |
| Width | 32.8 mm | |
| Length | 66.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 186W | ||
Package Type Q0BOOST | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 22 | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Operating Temperature -40°C | ||
Height 11.9mm | ||
Standards/Approvals No | ||
Series NXH100B120H3Q0 | ||
Width 32.8 mm | ||
Length 66.2mm | ||
Automotive Standard No | ||
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage