onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 tray of 24 units)*

HK$10,599.312

Add to Basket
Select or type quantity
Last RS stock
  • Final 24 unit(s), ready to ship from another location
Units
Per unit
Per Tray*
24 - 24HK$441.638HK$10,599.31
48 - 48HK$432.804HK$10,387.30
72 +HK$424.146HK$10,179.50

*price indicative

RS Stock No.:
245-6963
Mfr. Part No.:
NXH100B120H3Q0SG
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current

61 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

186 W

Package Type

Case 180AJ (Pb-Free and Halide-Free) Solder Pins

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with pre applied thermal interface material and without pre applied TIM

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links