onsemi IGBT Module Q0PACK - Case 180AJ, Surface
- RS Stock No.:
- 245-6981
- Mfr. Part No.:
- NXH40B120MNQ0SNG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
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Subtotal (1 tray of 24 units)*
HK$16,879.392
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- Shipping from 03 July 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 24 - 24 | HK$703.308 | HK$16,879.39 |
| 48 - 48 | HK$689.242 | HK$16,541.81 |
| 72 + | HK$675.463 | HK$16,211.11 |
*price indicative
- RS Stock No.:
- 245-6981
- Mfr. Part No.:
- NXH40B120MNQ0SNG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 118W | |
| Package Type | Q0PACK - Case 180AJ | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 55.2mm | |
| Width | 32.8 mm | |
| Height | 13.9mm | |
| Standards/Approvals | RoHS | |
| Series | NXH40B120MNQ0SNG | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 118W | ||
Package Type Q0PACK - Case 180AJ | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 55.2mm | ||
Width 32.8 mm | ||
Height 13.9mm | ||
Standards/Approvals RoHS | ||
Series NXH40B120MNQ0SNG | ||
Automotive Standard No | ||
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC
The ON Semiconductor 3 Channel Boost Q1 Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V 40 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1200 V Bypass and Anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant
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