onsemi NXH100B120H3Q0SG IGBT Module 1200 V Case 180AJ, Surface
- RS Stock No.:
- 245-6964
- Mfr. Part No.:
- NXH100B120H3Q0SG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
HK$525.20
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Units | Per unit |
|---|---|
| 1 - 1 | HK$525.20 |
| 2 - 3 | HK$514.70 |
| 4 - 7 | HK$504.40 |
| 8 - 11 | HK$494.30 |
| 12 + | HK$484.40 |
*price indicative
- RS Stock No.:
- 245-6964
- Mfr. Part No.:
- NXH100B120H3Q0SG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 186W | |
| Number of Transistors | 2 | |
| Package Type | Case 180AJ | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | NXH100B120H3Q0SG | |
| Standards/Approvals | RoHS | |
| Height | 13.9mm | |
| Length | 55.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 186W | ||
Number of Transistors 2 | ||
Package Type Case 180AJ | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Series NXH100B120H3Q0SG | ||
Standards/Approvals RoHS | ||
Height 13.9mm | ||
Length 55.2mm | ||
Automotive Standard No | ||
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with pre applied thermal interface material and without pre applied TIM
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