Infineon FP75R12KE3BOSA1, Type N-Channel IGBT Module, 105 A 1200 V AG-ECONO3-3, Clamp
- RS Stock No.:
- 111-6095
- Mfr. Part No.:
- FP75R12KE3BOSA1
- Manufacturer:
- Infineon
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HK$837.10
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Units | Per unit |
|---|---|
| 1 - 2 | HK$837.10 |
| 3 - 4 | HK$816.10 |
| 5 + | HK$799.90 |
*price indicative
- RS Stock No.:
- 111-6095
- Mfr. Part No.:
- FP75R12KE3BOSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 105A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 355W | |
| Package Type | AG-ECONO3-3 | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Switching Speed | 0.26μs | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Length | 122mm | |
| Height | 17mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 105A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 355W | ||
Package Type AG-ECONO3-3 | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Switching Speed 0.26μs | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Length 122mm | ||
Height 17mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon IGBT Module, 1200V Max Collector Emitter Voltage, 105A Max Continuous Collector Current - FP75R12KE3BOSA1
This IGBT module is a power semiconductor device designed to switch and control high-voltage DC in industrial converter and inverter environments. It combines insulated-gate control with high-voltage capability to support power conversion tasks across a broad operating temperature range, and is supplied in a clamp-mount package suitable for secure mechanical attachment.
Features and Benefits:
• 1200V rating enables high-voltage switching in power stages
• 105A continuous collector current for sustained load handling
• 355W maximum dissipation supports elevated power throughput
• 2.2V Vce(sat) minimises conduction losses under load
• 0.26μs switching speed reduces transition losses during switching
• ±20V gate-emitter limit ensures robust gate drive tolerance
• 105A continuous collector current for sustained load handling
• 355W maximum dissipation supports elevated power throughput
• 2.2V Vce(sat) minimises conduction losses under load
• 0.26μs switching speed reduces transition losses during switching
• ±20V gate-emitter limit ensures robust gate drive tolerance
Applications
• Suitable for 1200V IGBT module for inverters in industrial drives
• Ideal for high-power IGBT 355W converter assemblies
• Used for 105A collector current IGBT motor control systems
• Can be used for clamp-mount IGBT module power racks
• Used with non-automotive power electronics and traction testbeds
• Ideal for high-power IGBT 355W converter assemblies
• Used for 105A collector current IGBT motor control systems
• Can be used for clamp-mount IGBT module power racks
• Used with non-automotive power electronics and traction testbeds
What ambient temperatures can the device tolerate during operation?
It operates correctly across a wide temperature window from -40°C to 125°C, enabling use in demanding thermal environments.
How does the package affect mounting and serviceability?
The clamp-style mounting arrangement provides firm attachment and straightforward replacement without specialised fasteners.
What electrical polarity and channel type does it use?
The device is an N-channel IGBT suitable for conventional collector-emitter switching topologies.
Are there restrictions on gate drive voltage during use?
The gate-emitter voltage must be kept within ±20V to prevent gate-oxide stress and ensure reliable switching.
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