Infineon FS150R12KE3BOSA1 3 Phase Bridge IGBT Module, 200 A 1200 V AG-ECONO3-4, Panel Mount
- RS Stock No.:
- 166-1096
- Mfr. Part No.:
- FS150R12KE3BOSA1
- Manufacturer:
- Infineon
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Available for back order.
Price Each (In a Tray of 10)
HK$2,557.923
| units | Per unit | Per Tray* |
| 10 - 10 | HK$2,557.923 | HK$25,579.23 |
| 20 - 30 | HK$2,481.185 | HK$24,811.85 |
| 40 + | HK$2,406.75 | HK$24,067.50 |
| *price indicative | ||
- RS Stock No.:
- 166-1096
- Mfr. Part No.:
- FS150R12KE3BOSA1
- Manufacturer:
- Infineon
RoHS Status: Exempt
- COO (Country of Origin):
- HU
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- HU
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
| Attribute | Value |
| Maximum Continuous Collector Current | 200 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 700 W |
| Package Type | AG-ECONO3-4 |
| Configuration | 3 Phase Bridge |
| Mounting Type | Panel Mount |
| Channel Type | N |
| Transistor Configuration | 3 Phase |
| Dimensions | 122 x 62 x 17mm |
| Maximum Operating Temperature | +125 °C |
| Minimum Operating Temperature | -40 °C |