- RS Stock No.:
- 166-0911
- Mfr. Part No.:
- FS100R12KT4GBOSA1
- Manufacturer:
- Infineon
30 In stock for delivery within 3 working days
Added
Price Each (In a Tray of 10)
HK$1,389.708
Units | Per unit | Per Tray* |
10 - 10 | HK$1,389.708 | HK$13,897.08 |
20 - 30 | HK$1,361.914 | HK$13,619.14 |
40 + | HK$1,334.676 | HK$13,346.76 |
*price indicative |
- RS Stock No.:
- 166-0911
- Mfr. Part No.:
- FS100R12KT4GBOSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- MY
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 515 W |
Configuration | 3 Phase Bridge |
Package Type | AG-ECONO3-4 |
Mounting Type | Panel Mount |
Channel Type | N |
Transistor Configuration | 3 Phase |
Dimensions | 122 x 62 x 17mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |