Infineon FS100R12KT4GBOSA1, Type N-Channel IGBT Module, 100 A 1200 V AG-ECONO3-4, Clamp

The image is for reference only, please refer to product details and specifications

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

HK$821.30

Add to Basket
Select or type quantity
In Stock
  • 11 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 2HK$821.30
3 - 4HK$800.80
5 +HK$788.40

*price indicative

RS Stock No.:
111-6091
Mfr. Part No.:
FS100R12KT4GBOSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

100A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

515W

Package Type

AG-ECONO3-4

Mount Type

Clamp

Channel Type

Type N

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

122mm

Height

17mm

Width

62 mm

Automotive Standard

No

RoHS Status: Not Applicable

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links