N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

RS Stock No.:: 754-5421
Mfr. Part No.:: IPB025N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

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HK$49.62

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Units	Per unit
1 - 249	HK$49.62
250 - 499	HK$48.38
500 +	HK$47.63

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RS Stock No.:: 754-5421
Mfr. Part No.:: IPB025N10N3GATMA1
Manufacturer:: Infineon

MOSFET N-ch OptiMOS3 100V 180A TO263-7
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	4.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Width	9.45mm
Transistor Material	Si
Typical Gate Charge @ Vgs	155 nC @ 10 V
Length	10.31mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.57mm

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

FREE delivery for orders over HK$850.00

Infineon OptiMOS™3 Power MOSFETs, 100V and over