Infineon OptiMOS 3 Type N-Channel MOSFET, 130 A, 150 V Enhancement, 7-Pin TO-263

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HK$26,354.00

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1000 - 1000HK$26.354HK$26,354.00
2000 - 3000HK$25.827HK$25,827.00
4000 +HK$25.31HK$25,310.00

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RS Stock No.:
178-7444
Mfr. Part No.:
IPB065N15N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Width

4.57 mm

Height

9.45mm

Standards/Approvals

No

Length

10.31mm

Automotive Standard

No

RoHS Status: Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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