N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

RS Stock No.:: 754-5428
Mfr. Part No.:: IPB036N12N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

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Price Each

HK$48.10

985 In stock for delivery within 3 working days*

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FREE delivery for orders over HK$850.00

Units	Per unit
1 +	HK$48.10

RS Stock No.:: 754-5428
Mfr. Part No.:: IPB036N12N3GATMA1
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	120 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	3.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	158 nC @ 10 V
Length	10.31mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Width	9.45mm
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

FREE delivery for orders over HK$850.00

Infineon OptiMOS™3 Power MOSFETs, 100V and over