Vishay Si2328DS Type N-Channel MOSFET, 1.15 A, 100 V Enhancement, 3-Pin SOT-23 SI2328DS-T1-E3
- RS Stock No.:
- 710-3266
- Mfr. Part No.:
- SI2328DS-T1-E3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$57.40
Add 50 units to get free delivery
In Stock
- 10 unit(s) ready to ship from another location
- Plus 760 unit(s) shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | HK$5.74 | HK$57.40 |
| 750 - 1490 | HK$5.61 | HK$56.10 |
| 1500 + | HK$5.51 | HK$55.10 |
*price indicative
- RS Stock No.:
- 710-3266
- Mfr. Part No.:
- SI2328DS-T1-E3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | Si2328DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Maximum Power Dissipation Pd | 730mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series Si2328DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Maximum Power Dissipation Pd 730mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2328DS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Vishay N-Channel MOSFET 100 V, 3-Pin SOT-23 SI2328DS-T1-GE3
- Vishay TrenchFET Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay Si2325DS Type P-Channel MOSFET 150 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-E3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-E3