Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
- RS Stock No.:
- 919-0275
- Mfr. Part No.:
- SI2325DS-T1-E3
- Manufacturer:
- Vishay
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Subtotal (1 reel of 3000 units)*
HK$14,757.00
FREE delivery for orders over HK$250.00
- Shipping from 16 October 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | HK$4.919 | HK$14,757.00 |
| 15000 + | HK$4.772 | HK$14,316.00 |
*price indicative
- RS Stock No.:
- 919-0275
- Mfr. Part No.:
- SI2325DS-T1-E3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -530mA | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | SOT-23 | |
| Series | Si2325DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Power Dissipation Pd | 750mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Standards/Approvals | RoHS | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -530mA | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type SOT-23 | ||
Series Si2325DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Power Dissipation Pd 750mW | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4mm | ||
Standards/Approvals RoHS | ||
Length 3.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si2325DS Series MOSFET, -150V Maximum Drain Source Voltage, 1.2Ω Maximum Drain Source Resistance - SI2325DS-T1-E3
Features and Benefits:
Applications
What are the thermal limits for reliable operation?
How does the package influence board layout?
What electrical constraint should designers observe for gate driving?
How should power dissipation considerations affect cooling strategy?
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