Vishay Single N-Channel MOSFET, 1.15 A, 100 V Enhancement, 3-Pin SOT-23 SI2328DS-T1-GE3
- RS Stock No.:
- 787-9229
- Mfr. Part No.:
- SI2328DS-T1-GE3
- Manufacturer:
- Vishay
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 787-9229
- Mfr. Part No.:
- SI2328DS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Transistor Configuration | Single | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 1.15 A | |
| Maximum Drain Source Voltage (Vds) | 100 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | SOT-23 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.2 V | |
| Height | 1.02 mm | |
| Length | 3.04 mm | |
| Maximum Drain Source Resistance (Rds) | 2.4 Ω | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 1.25 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 1.45 nC | |
| Width | 1.4 mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Transistor Configuration Single | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 1.15 A | ||
Maximum Drain Source Voltage (Vds) 100 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type SOT-23 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.2 V | ||
Height 1.02 mm | ||
Length 3.04 mm | ||
Maximum Drain Source Resistance (Rds) 2.4 Ω | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 1.25 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 1.45 nC | ||
Width 1.4 mm | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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