Vishay Dual TrenchFET 2 N-Channel MOSFET, 850 mA, 20 V Enhancement, 6-Pin SOT-363 SQ1922AEEH-T1_GE3

The image is for reference only, please refer to product details and specifications

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
188-4911
Mfr. Part No.:
SQ1922AEEH-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

850mA

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-363

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

530mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.9nC

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.5W

Maximum Gate Source Voltage Vgs

12V

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Length

2.2mm

Height

1mm

Width

1.35mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET.

TrenchFET® power MOSFET

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy