Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- RS Stock No.:
- 188-5101
- Mfr. Part No.:
- SQJ208EP-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$99.70
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 26 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | HK$9.97 | HK$99.70 |
| 750 - 1490 | HK$9.73 | HK$97.30 |
| 1500 + | HK$9.57 | HK$95.70 |
*price indicative
- RS Stock No.:
- 188-5101
- Mfr. Part No.:
- SQJ208EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 0.77V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.01mm | |
| Width | 4.47 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 0.77V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1.01mm | ||
Width 4.47 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs.
TrenchFET® power MOSFET
Related links
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SI4946BEY-T1-E3
- Vishay Dual TrenchFET 2 Type P 5.3 A 8-Pin SO-8 SI4559ADY-T1-E3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJ912DEP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8