Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3

RS Stock No.:: 188-5101
Mfr. Part No.:: SQJ208EP-T1_GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3

Bulk discount available

Price Each (In a Pack of 10)

HK$9.06

On back order for despatch 07/09/2025, delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
10 - 740	HK$9.06	HK$90.60
750 - 1490	HK$8.84	HK$88.40
1500 +	HK$8.70	HK$87.00

**price indicative

RS Stock No.:: 188-5101
Mfr. Part No.:: SQJ208EP-T1_GE3
Manufacturer:: Vishay

Datasheet SQJ208EP-T1_GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A, 60 A
Maximum Drain Source Voltage	40 (Channel 1) V, 40 (Channel 2) V
Package Type	PowerPAK SO-8L Dual
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3 (Channel 1) V, 2.4 (Channel 2) V
Minimum Gate Threshold Voltage	1.3 (Channel 1) V, 1.4 (Channel 2) V
Maximum Power Dissipation	27 W, 48 W
Transistor Configuration	Dual
Maximum Gate Source Voltage	±20 V
Maximum Operating Temperature	+175 °C
Length	5mm
Number of Elements per Chip	2
Width	4.47mm
Typical Gate Charge @ Vgs	22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)
Height	1.01mm
Minimum Operating Temperature	-55 °C
Automotive Standard	AEC-Q101