Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

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Subtotal (1 pack of 25 units)*

HK$113.10

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Units
Per unit
Per Pack*
25 - 25HK$4.524HK$113.10
50 - 75HK$4.444HK$111.10
100 - 225HK$4.364HK$109.10
250 - 975HK$4.284HK$107.10
1000 +HK$4.208HK$105.20

*price indicative

Packaging Options:
RS Stock No.:
228-2835
Mfr. Part No.:
SIA938DJT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-70

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

7.8W

Typical Gate Charge Qg @ Vgs

3.5nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel MOSFET provides exceptional versatility for power management design.

Very low RDS(on) and excellent RDS x Qg

Figure-of-Merit (FOM) in an ultra compact

package footprint

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