Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3
- RS Stock No.:
- 228-2835
- Mfr. Part No.:
- SIA938DJT-T1-GE3
- Manufacturer:
- Vishay
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HK$116.50
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- Plus 5,975 unit(s) shipping from 29 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$4.66 | HK$116.50 |
| 50 - 75 | HK$4.576 | HK$114.40 |
| 100 - 225 | HK$4.496 | HK$112.40 |
| 250 - 975 | HK$4.412 | HK$110.30 |
| 1000 + | HK$4.336 | HK$108.40 |
*price indicative
- RS Stock No.:
- 228-2835
- Mfr. Part No.:
- SIA938DJT-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 7.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 7.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Vishay TrenchFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.5A Maximum Continuous Drain Current - SIA938DJT-T1-GE3
This MOSFET is a Compact, surface-mount dual N-channel transistor designed for switching and power-management duties in electronic systems. It operates at low voltage levels and is suitable for Compact assemblies where board space is limited. The device accommodates moderate continuous currents and supports operation across a wide temperature span for industrial and commercial electronics environments.
Features and Benefits:
• 20V drain rating enables low-voltage system switching
• 4.5A continuous drain current supports moderate load currents
• 21.5mΩ low Rds(on) reduces conduction losses
• 3.5nC typical gate charge minimises switching energy
• 12V maximum gate-source protection simplifies gate drive
• 7.8W power dissipation allows thermal headroom in Compact layouts
• 4.5A continuous drain current supports moderate load currents
• 21.5mΩ low Rds(on) reduces conduction losses
• 3.5nC typical gate charge minimises switching energy
• 12V maximum gate-source protection simplifies gate drive
• 7.8W power dissipation allows thermal headroom in Compact layouts
Applications
• Suitable for battery-powered motor drivers and controllers
• Ideal for DC-DC converters in embedded systems
• Used for load switching in automation control modules
• Can be used for power distribution in portable electronics
• Ideal for DC-DC converters in embedded systems
• Used for load switching in automation control modules
• Can be used for power distribution in portable electronics
What thermal range can it tolerate during operation?
It is rated to function between -55°C and 150°C, supporting cold-start and high-temperature operation.
How is the device packaged for PCB assembly?
It comes in a Compact SC-70 surface-mount package with an eight-pin count for dual-element placement.
Can this transistor be used in multi-transistor chip configurations?
Yes, it contains two transistor elements on a single die configured as a dual transistor, simplifying layout for paired switching.
What gate-drive considerations apply for robust operation?
The maximum permissible gate-to-source voltage is 12V
designs should limit drive voltage accordingly to avoid exceeding this rating.
How much power can the device safely dissipate on a PCB?
The maximum power dissipation is specified as 7.8W, which must be managed via PCB thermal design and appropriate copper area.
Related links
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SC-70
- Vishay Isolated TrenchFET 2 Type P 4.5 A 6-Pin SC-70
- Vishay Isolated TrenchFET 2 Type P 4.5 A 6-Pin SC-70 SIA517DJ-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-89
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