Vishay SiS862ADN Type N-Channel MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SIS862ADN-T1-GE3

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
188-4889
Mfr. Part No.:
SIS862ADN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

SiS862ADN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.8nC

Maximum Power Dissipation Pd

39W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

1.07mm

Width

3.15mm

Standards/Approvals

No

Length

3.15mm

Automotive Standard

No

N-Channel 60 V (D-S) MOSFET

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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