Vishay SiSS76LDN Type N-Channel MOSFET, 67.4 A, 70 V Enhancement, 8-Pin PowerPAK 1212
- RS Stock No.:
- 210-5017
- Mfr. Part No.:
- SiSS76LDN-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$16,224.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | HK$5.408 | HK$16,224.00 |
| 15000 + | HK$5.30 | HK$15,900.00 |
*price indicative
- RS Stock No.:
- 210-5017
- Mfr. Part No.:
- SiSS76LDN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67.4A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | SiSS76LDN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22.3nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 0.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67.4A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series SiSS76LDN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22.3nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 0.83mm | ||
Automotive Standard No | ||
The Vishay N-Channel 70 V (D-S) MOSFET has PowerPAK 1212-8S package type.
TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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