Vishay SiSS60DN Type N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

HK$19,041.00

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Units
Per unit
Per Reel*
3000 - 12000HK$6.347HK$19,041.00
15000 +HK$6.157HK$18,471.00

*price indicative

RS Stock No.:
188-4904
Mfr. Part No.:
SISS60DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

181.8A

Maximum Drain Source Voltage Vds

30V

Series

SiSS60DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.01mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.68V

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

65.8W

Typical Gate Charge Qg @ Vgs

57nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.78mm

Width

3.3 mm

Length

3.3mm

Standards/Approvals

No

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET with Schottky Diode.

TrenchFET® Gen IV power MOSFET

SKYFET® with monolithic Schottky diode

Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching

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