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    Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 Vishay Siliconix SIRC06DP-T1-GE3

    RS Stock No.:
    178-3940P
    Mfr. Part No.:
    SIRC06DP-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Vishay Siliconix
    View all MOSFETs
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    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    HK$8.768

    unitsPer unit
    25 +HK$8.768
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    RS Stock No.:
    178-3940P
    Mfr. Part No.:
    SIRC06DP-T1-GE3
    Manufacturer:
    Vishay Siliconix

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product overview and Technical data sheets


    Legislation and Compliance

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product Details

    TrenchFET® Gen IV power MOSFET
    SkyFET® with monolithic Schottky diode



    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current60 A
    Maximum Drain Source Voltage30 V
    Package TypeSO-8
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance4 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1V
    Minimum Gate Threshold Voltage2.1V
    Maximum Power Dissipation50 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-16 V, +20 V
    Number of Elements per Chip2
    Typical Gate Charge @ Vgs38.5 nC @ 10 V
    Maximum Operating Temperature+150 °C
    Transistor MaterialSi
    Length5.99mm
    Width5mm
    Forward Diode Voltage0.7V
    Minimum Operating Temperature-55 °C
    Height1.07mm
    SeriesTrenchFET
    Available for back order.
    Add to Basket
    units

    Added

    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    HK$8.768

    unitsPer unit
    25 +HK$8.768
    Packaging Options: