JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 166-2961
Mfr. Part No.J105
HK$2.119
Each (In a Bag of 10000)
units
N 500mA - -25 V 25V Single Single 3 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1747
Mfr. Part No.J105
HK$3.527
Each (In a Pack of 10)
units
N 500mA - -25 V 25V Single Single 3 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS Stock No. 166-2669
Mfr. Part No.MMBFJ177
HK$0.978
Each (On a Reel of 3000)
units
P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 671-1141
Mfr. Part No.MMBFJ177
HK$3.106
Each (In a Pack of 5)
units
P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 792-5164
Mfr. Part No.2SK3557-6-TB-E
HK$2.793
Each (In a Pack of 25)
units
N 10 → 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-2020
Mfr. Part No.2SK3557-6-TB-E
HK$0.979
Each (On a Reel of 3000)
units
N 10 → 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 177-5508
Mfr. Part No.2N4392CSM
BrandSemelab
HK$492.657
Each (In a Tray of 100)
units
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
RS Stock No. 806-1719
Mfr. Part No.BF256B
HK$2.563
Each (In a Pack of 50)
units
N 6 → 13mA - -30 V 30V Single Single - Through Hole TO-92 3 - - 4.58 x 3.86 x 4.58mm
RS Stock No. 738-7607
Mfr. Part No.2N4392CSM
BrandSemelab
HK$443.29
Each
units
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
RS Stock No. 124-1384
Mfr. Part No.BF256B
HK$0.792
Each (In a Bag of 1000)
units
N 6 → 13mA - -30 V 30V Single Single - Through Hole TO-92 3 - - 4.58 x 3.86 x 4.58mm
RS Stock No. 124-1385
Mfr. Part No.J112
HK$0.805
Each (In a Bag of 1000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1757
Mfr. Part No.J112
HK$2.156
Each (In a Pack of 50)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 864-7840
Mfr. Part No.MMBFJ175LT1G
HK$2.614
Each (In a Pack of 25)
units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 806-1750
Mfr. Part No.J109
HK$1.992
Each (In a Pack of 25)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 103-8162
Mfr. Part No.PMBFJ177,215
BrandNXP
HK$1.045
Each (On a Reel of 3000)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 112-5510
Mfr. Part No.PMBFJ177,215
BrandNXP
HK$3.478
Each (In a Pack of 5)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-2021
Mfr. Part No.J109
HK$1.234
Each (In a Bag of 1000)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 169-7869
Mfr. Part No.DSK9J01P0L
BrandPanasonic
HK$1.516
Each (On a Reel of 3000)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SSMini3 F3 B 3 - - 1.6 x 0.85 x 0.7mm
RS Stock No. 545-465
Mfr. Part No.2SK771-5-TB-E
BrandSanyo
HK$2.53
Each (In a Pack of 10)
units
N - 40 V - -40V Single - - Surface Mount CP 3 2.1pF 9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 145-4162
Mfr. Part No.2SK3666-3-TB-E
HK$0.563
Each (On a Reel of 3000)
units
N 1.2 → 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
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