JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 792-5164
Mfr. Part No.2SK3557-6-TB-E
HK$2.556
Each (In a Pack of 25)
units
N 10 → 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-2020
Mfr. Part No.2SK3557-6-TB-E
HK$1.12
Each (On a Reel of 3000)
units
N 10 → 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 177-5508
Mfr. Part No.2N4392CSM
BrandSemelab
HK$492.657
Each (In a Tray of 100)
units
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
RS Stock No. 738-7607
Mfr. Part No.2N4392CSM
BrandSemelab
HK$443.29
Each
units
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
RS Stock No. 124-1385
Mfr. Part No.J112
HK$0.961
Each (In a Bag of 1000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1757
Mfr. Part No.J112
HK$2.627
Each (In a Pack of 50)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 792-5161
Mfr. Part No.2SK3666-3-TB-E
HK$2.688
Each (In a Pack of 50)
units
N 1.2 → 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS Stock No. 145-4162
Mfr. Part No.2SK3666-3-TB-E
HK$0.651
Each (On a Reel of 3000)
units
N 1.2 → 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS Stock No. 760-3126
Mfr. Part No.2SK209-Y(TE85L,F)
BrandToshiba
HK$2.82
Each (In a Pack of 10)
units
N 1.2 → 3.0mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 545-465
Mfr. Part No.2SK771-5-TB-E
BrandSanyo
HK$2.53
Each (In a Pack of 10)
units
N - 40 V - -40V Single - - Surface Mount CP 3 2.1pF 9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 103-8162
Mfr. Part No.PMBFJ177,215
BrandNXP
HK$1.055
Each (On a Reel of 3000)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 806-1750
Mfr. Part No.J109
HK$2.584
Each (In a Pack of 25)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 163-2024
Mfr. Part No.2SK932-23-TB-E
HK$1.092
Each (On a Reel of 3000)
units
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5173
Mfr. Part No.2SK932-23-TB-E
HK$2.888
Each (On a Tape of 25)
units
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 166-2021
Mfr. Part No.J109
HK$1.308
Each (In a Bag of 1000)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 864-7840
Mfr. Part No.MMBFJ175LT1G
HK$2.956
Each (In a Pack of 25)
units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 163-0037
Mfr. Part No.MMBFJ175LT1G
HK$1.023
Each (On a Reel of 3000)
units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 112-5510
Mfr. Part No.PMBFJ177,215
BrandNXP
HK$4.49
Each (In a Pack of 5)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-2319
Mfr. Part No.BSR58
HK$0.687
Each (On a Reel of 3000)
units
N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 806-4282
Mfr. Part No.MMBF5103
HK$2.214
Each (In a Pack of 50)
units
N 10 → 40mA 20 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
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